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C4D10120D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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C4D10120D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISCD7039 eq C4D10120D Silicon Carbide Schottky Diode www.iscsemi.com 1 FEATURES · High-Frequency Operation · Positive Temperature Coefficient · Extremely Fast Switching · No reverse recovery APPLICATIONS · AC/DC converters · Power factor correction · Switch mode power supply ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Repetitisve Peak Reverse Voltage 1200 V IF Continuous Forward Current Tc=25°C 113 A Tc=135°C 54 IFSM Non-Repetitive Forward Surge Current Tc=25°C,Tp=10ms,Half Sine Pulse 130 A Tc=110°C,Tp=10ms,Half Sine Pulse 110 IFRM Repetitive Peak Forward Surge Current Tc=25°C,Tp=10ms,Half Sine Pulse 91 A Tc=110°C,Tp=10ms,Half Sine Pulse 61 dv/dt Maximum Rate of Voltage Change VR= 0-960V 200 V/ns Ptot Power Dissipation Tc=25°C 530 W Tc=110°C 230 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ |
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