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HTDR-3 Datasheet(PDF) 1 Page - Electronic devices inc.

Part # HTDR-3
Description  300 NANOSECOND AT HIGH TEMPERATURE- FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES
PDF  2 Pages
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Manufacturer  EDI [Electronic devices inc.]
Direct Link  http://www.edidiodes.com
Logo EDI - Electronic devices inc.

HTDR-3 Datasheet(HTML) 1 Page - Electronic devices inc.

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HTDR-3
Max DC Reverse Current @ PRV @ 200 C,I
18
typical
50 mA
Average Rectified Forward Current @ 50 C, I
Ambient Operating and Storage Temperature Range
O
O
O
O
ELECTRICAL CHARACTERISTICS (at TA
O
EDI TYPE NO.
PEAK REVERSE VOL TAGE
DIMENSIONS
HTDR- 3
3,000
See Fig.2
1 mA
0.1
Max DC Reverse Current @ PRV @ 25 C, I
Average Rectified Forward Current @ 200 C, I
Forward Stability Tj 200 C
O
O
O
O
O
300 NANOSECOND AT 200 C
HIGH TEMPERATURE- FAST RECOVERY
HIGH VOLTAGE RECTIFIER DIODES
O
O
R
R
(See Note:1)
30
max
(See Note 2)
25 Max
-55
to+200
OC
OC
A
A
A
Exceptional high temperature Stability
up t o 20 0 C
Exceptionally low leakage
Small size
3KV PRV
U
Max
Max Reverse Recovery, Trr
(See Fig.1 and 3)
O
50ns.max at 25
OC
300ns.max at 200
OC
Our proprietary diffusion and passivation process provides this unusual stability and no leakage drift at these elevated
temperatures. All diodes are subjected to 10 temperature cycles from -55 C to + 200 C.
V
Max. Fwd. Voltage Drop at 25 C and 10ma ,VF
EDI reserves the right to change these specifications at any time without notice.
=25 C Unless Otherwise Specified)
Note 1: IR at 200 C readings are taken in oil after voltage has been applied to device
for 5 minutes.
Note 2: All diodes are hot forward swept for forward stability to maximum temperature
of 200 C on dynamic display on curve trace oscilloscope.
O
O


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