Nexperia

PSMN1R2-80ASE

N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

trr

reverse recovery time

-

62

-

ns

Qr

recovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 40 V; Tj = 25 °C; Fig. 17

-

76.5

-

nC

aaa-040965

0

1

2

3

4

0

80

160

240

320

400

VDS (V)

ID

ID

(A)

(A)

4 V

4 V

5 V

5 V VGS = 5.5 V

VGS = 5.5 V 6 V

6 V

6.5 V

6.5 V

7 V

7 V

8 V

8 V

10 V

10 V

Tj = 25 °C

Fig. 8. Output characteristics; drain current as a

function of drain-source voltage; typical values

aaa-040966

0

4

8

12

16

20

0

1

2

3

4

5

6

VGS (V)

RDSon

RDSon

(mΩ)

(mΩ)

Tj = 25 °C; ID = A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

aaa-040967

0

1

2

3

4

5

6

7

8

0

80

160

240

320

400

VGS (V)

ID

ID

(A)

(A)

Tj = 25°C

Tj = 25°C

175°C

175°C

VDS = 8 V

Fig. 10. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

aaa-040968

0

80

160

240

320

400

0

2

4

6

8

10

ID (A)

RDSon

RDSon

(mΩ)

(mΩ)

6 V

6 V

6.5 V

6.5 V

7 V

7 V

8 V

8 V

VGS = 10 V

VGS = 10 V

Tj = 25 °C

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values

PSMN1R2-80ASE

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Product data sheet

29 October 2024

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