BD241D, BD241E, BD241F

NPN SILICON POWER TRANSISTORS

PRODUCT

INFORMATION

1

SEPTEMBER 1981 - REVISED MARCH 1997

Copyright © 1997, Power Innovations Limited, UK

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

q

40 W at 25°C Case Temperature

q

3 A Continuous Collector Current

q

5 A Peak Collector Current

q

Customer-Specified Selections Available

B

C

E

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

1

2

3

absolute maximum ratings

at 25°C case temperature (unless otherwise noted)

2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

RATING

SYMBOL

VALUE

UNIT

BD241D

BD241E

BD241F

160

180

200

V

BD241D

BD241E

BD241F

120

140

160

V

Emitter-base voltage

5

V

Continuous collector current

3

A

Peak collector current (see Note 1)

5

A

Continuous base current

1

A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

40

W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

2

W

Unclamped inductive load energy (see Note 4)

2

32

mJ

Operating junction temperature range

-65 to +150

°C

Storage temperature range

-65 to +150

°C

Lead temperature 3.2 mm from case for 10 seconds

250

°C