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BD895 Datasheet(PDF) 2 Page - Power Innovations Ltd

Part # BD895
Description  NPN SILICON POWER DARLINGTONS
PDF  6 Pages
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Manufacturer  POINN [Power Innovations Ltd]
Direct Link  http://www.bourns.com
Logo POINN - Power Innovations Ltd

BD895 Datasheet(HTML) 2 Page - Power Innovations Ltd

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BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
2
AUGUST 1993 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 100 mA
IB = 0
(see Note 3)
BD895
BD897
BD899
BD901
45
60
80
100
V
ICEO
Collector-emitter
cut-off current
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
IB = 0
IB = 0
IB = 0
IB = 0
BD895
BD897
BD899
BD901
0.5
0.5
0.5
0.5
mA
ICBO
Collector cut-off
current
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
TC = 100°C
TC = 100°C
TC = 100°C
TC = 100°C
BD895
BD897
BD899
BD901
BD895
BD897
BD899
BD901
0.2
0.2
0.2
0.2
2
2
2
2
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC = 0
(see Notes 3 and 4)
2
mA
hFE
Forward current
transfer ratio
VCE =
3 V
IC = 3 A
(see Notes 3 and 4)
750
VCE(sat)
Collector-emitter
saturation voltage
IB =
12 mA
IC = 3 A
(see Notes 3 and 4)
2.5
V
VBE(on)
Base-emitter
voltage
VCE =
3 V
IC = 3 A
(see Notes 3 and 4)
2.5
V
VF
Parallel diode
forward voltage
IF =
8 A
3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.79
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
†
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = 3 A
VBE(off) = -3.5 V
IB(on) = 12 mA
RL = 10 Ω
IB(off) = -12 mA
tp = 20 µs, dc ≤ 2%
1
µs
toff
Turn-off time
5
µs



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