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HER1601G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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HER1601G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  - 354 - PIN 1 PIN 3 Positive CT PIN 2 CASE HER1601G THRU HER1608G 16.0 AMPS. Glass Passivated High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 16.0 Amperes Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: TO-220 molded plastic Epoxy: UL 94V-O rate flame retardant Terminals: Leads solderable per MIL- STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC/10 seconds .16”,(4.06mm) from case. Weight: 2.24 grams TO-220 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol HER 1601G HER 1602G HER 1603G HER 1604G HER 1605G HER 1606G HER 1607G HER 1608G Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current @TC =100 ℃ I(AV) 16.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 125 A Maximum Instantaneous Forward Voltage @8.0A VF 1.0 1.3 1.7 V Maximum DC Reverse Current @ TA=25 ℃ at Rated DC Blocking Voltage @ TA=125 ℃ IR 10.0 400 uA uA Typical Reverse Recovery Time ( Note 1 ) Trr 50 80 nS Typical Junction Capacitance ( Note 2 ) Cj 80 50 pF Typical Thermal Resistance (Note 3) R θJC 1.5 ℃/W Operating Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +150 ℃ Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 3. Mounted on Heatsink Size of 4 in x 6 in x 0.25 in Al-Plate. |
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