TIPL765, TIPL765A

NPN SILICON POWER TRANSISTORS

PRODUCT

INFORMATION

1

AUGUST 1978 - REVISED MARCH 1997

Copyright © 1997, Power Innovations Limited, UK

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

q

Rugged Triple-Diffused Planar Construction

q

10 A Continuous Collector Current

q

Operating Characteristics Fully Guaranteed

at 100°C

q

1000 Volt Blocking Capability

q

125 W at 25°C Case Temperature

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRAA

B

C

E

1

2

3

absolute maximum ratings

at 25°C case temperature (unless otherwise noted)

NOTE

RATING

SYMBOL

VALUE

UNIT

TIPL765

TIPL765A

850

1000

V

TIPL765

TIPL765A

850

1000

V

TIPL765

TIPL765A

400

450

V

Emitter-base voltage

10

V

Continuous collector current

10

A

Peak collector current (see Note 1)

15

A

Continuous device dissipation at (or below) 25°C case temperature

125

W

Operating junction temperature range

-65 to +150

°C

Storage temperature range

-65 to +150

°C