RF CHARACTERISTICS (

WATTS OUTPUT )

10

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Military Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

PATENTED GOLD METALIZED

10 Watts Single Ended

Package Style AP

HIGH EFFICIENCY, LINEAR,

ABSOLUTE MAXIMUM RATINGS (TC = 25 C)

o

Total

Device

Junction to

Case Thermal

Maximum

Junction

Storage

Temperature

DC Drain

Current

Drain to

Gate

Drain to

Source

Gate to

Source

40 Watts

4.2

C

o

200

-65

to 150

3.2 A

30V

V

V

70

70

ELECTRICAL CHARACTERISTICS (EACH SIDE)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Gps

η

VSWR

Common Source Power Gai

Drain Efficiency

Load Mismatch Toleranc

dB

%

Relative

10

45

0.8

20:1

Idq =

Idq =

Idq =

0.8

0.8

A,

A,

A,

28.0

Vds =

V,

28.0

Vds =

V,

28.0

Vds =

V,

F = 1000 MHz

F = 1000 MHz

F = 1000 MHz

Bvdss

Idss

Igss

Vgs

gM

Rdson

Idsat

Ciss

Crss

Coss

Drain Breakdown Voltag

Zero Bias Drain Curren

Gate Leakage Curren

Gate Bias for Drain Curren

Forward Transconductanc

Saturation Resistanc

Saturation Curren

Common Source Input Capacitanc

Common Source Feedback Capacitanc

Common Source Output Capacitanc

65

0.8

1

7

1

0.8

1

4.8

36

4

24

Mho

Ohm

Amp

pF

V

V

pF

pF

mA

uA

0.04

Ids =

A,

Vgs = 0V

28.0

Vds =

V,

Vgs = 0V

Vds = 0 V,

Vgs = 30V

0.08

Ids =

A,

Vgs = Vds

Vds = 10V, Vgs = 5V

Vgs = 20V, Ids = 4

Vgs = 20V, Vds = 10V

28.0

Vds =

V, Vgs = 0V, F = 1 MHz

A

28.0

Vds =

V, Vgs = 0V, F = 1 MHz

28.0

Vds =

V, Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

REVISION

SILICON GATE ENHANCEMENT MODE

RF POWER

HIGH GAIN, LOW NOISE

"Polyfet"

process features

gold metal for greatly extended

lifetime. Low output capacitance

and high F enhance broadband

performance

t

TM

C

o

C

o

C/W

o

F2012

polyfet rf devices

Dissipation

Resistance

Temperature

Voltage

Voltage

Voltage

8/1/97

VDMOS TRANSISTOR