IRLL024ZPbF

12/22/04

www.irf.com

1

AUTOMOTIVE MOSFET

PD - 95990

SOT-223

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 150°C junction operating tempera-

ture, fast switching speed and improved repetitive avalanche

rating . These features combine to make this design an ex-

tremely efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

S

D

G

Description

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

150°C Operating Temperature

l

Fast Switching

l

Repetitive Avalanche Allowed up to Tjmax

l

Lead-Free

Features

Absolute Maximum Ratings

Parameter

Units

i

A

Pulsed Drain Current

™

W

Linear Derating Factor

i

W/°C

Gate-to-Source Voltage

V

d

mJ

Single Pulse Avalanche Energy Tested Value

h

Avalanche Current

Ù

A

Repetitive Avalanche Energy

g

mJ

Operating Junction and

Storage Temperature Range

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Ambient (PCB mount, steady state)

i

–––

45

°C/W

Junction-to-Ambient (PCB mount, steady state)

j

–––

120

-55 to + 150

1.0

0.02

± 16

Max.

5.0

4.0

40

2.8

38

21

See Fig.12a, 12b, 15, 16