SILICON PLANAR HIGH SPEED DIODES

BAS19, BAS20, BAS21

SOT-23

Formed SMD Package

Marking

BAS19 = A8

BAS20 = A81

BAS21 = A82

High-Speed Switching Diodes in a Microminiature Plastic Envelope.

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)

DESCRIPTION

SYMBOL

BAS19

BAS20

UNIT

Continuous Reverse Voltage

100

150

V

Repetitive Peak Reverse Voltage

120

200

V

Non Repetitive Peak Forward Current

t=1

µµs

A

t=1s

A

Average Rectified Forward Current

(averaged over any 20 ms period)

mA

Forward Current (DC)

mA

Repetitive Peak Forward Current

mA

Total Power Dissipation

mW

Storage Temperature Range

Junction Temperature

Thermal Resistance

Junction to Ambient in free air

K/W

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Forward Voltage

1.00

V

1.25

V

Reverse Breakdown Voltage

**BAS19

120

V

BAS20

200

V

***BAS21

250

V

*Mounted on a ceramic substrate 0f 8mm x 10mm x 0.7mm

***At zero life time measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V

200

250

BAS21

200

250

200

0.5

625

2.5

500

150

- 55 to +150

Pin Configuration

1 =

2 = NC

3 =

ANODE

CATHODE

3

1

2

Transys

Electronics

LI M ITE D