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FS70VSJ-2 Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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FS70VSJ-2 Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 4 page ![]() Feb.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr MITSUBISHI Nch POWER MOSFET FS70VSJ-2 HIGH-SPEED SWITCHING USE V µA mA V m Ω m Ω V S pF pF pF ns ns ns ns V °C/W ns 100 — — 1.0 — — — — — — — — — — — — — — — — — 1.5 13 14 0.46 68 8200 1150 600 54 140 830 350 1.0 — 115 — ±0.1 0.1 2.0 17 18 0.60 — — — — — — — — 1.5 1.00 — ELECTRICAL CHARACTERISTICS (Tch = 25 °C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol Unit Parameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 35A, VGS = 4V ID = 35A, VGS = 10V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 50V, ID = 35A, VGS = 10V, RGEN = RGS = 50 Ω IS = 35A, VGS = 0V Channel to case IS = 70A, dis/dt = –100A/ µs PERFORMANCE CURVES 0 40 80 120 160 200 0 200 50 100 150 POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) 100 3 5 7 101 2 3 5 7 102 2 3 5 7 100 35 7 2 101 35 7 2 102 35 7 2 3 23 tw = 10 ms TC = 25°C Single Pulse 100 ms 10ms 1ms DC 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 5V 4V 2.5V 3V 3.5V TC = 25°C Pulse Test VGS = 10V 0 20 40 60 80 100 0 0.4 0.8 1.2 1.6 2.0 PD = 125W VGS = 10V 3V 4V 5V TC = 25°C Pulse Test 6V |
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