2SC2383 datasheet(2/5 Pages) TOSHIBA

Part #	2SC2383

Description	Silicon NPN Epitaxial Type (PCT Process)

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC2383

2006-11-09

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 150 V, IE = 0

―

1.0

μA

Emitter cut-off current

IEBO

VEB = 6 V, IC = 0

―

1.0

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

160

―

DC current gain

hFE

(Note)

VCE = 5 V, IC = 200 mA

―

320

Collector-emitter saturation voltage

VCE (sat)

IC = 500 mA, IB = 50 mA

―

1.5

Base-emitter voltage

VBE

VCE = 5 V, IC = 5 mA

0.45

―

0.75

Transition frequency

VCE = 5 V, IC = 200 mA

100

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

Note: hFE classification R: 60 to 120, O: 100 to 200, Y: 160 to 320

Marking

C2383

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Characteristics

indicator

Part No. (or abbreviation code)

2SC2383 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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