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2SC6087 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SC6087
Description  Silicon NPN Epitaxial Type
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC6087 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC6087
2007-06-07
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 160 V, IE = 0
1
μA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
80
V
hFE (1)
VCE = 2 V, IC = 1 mA
80
200
hFE (2)
VCE = 2 V, IC = 0.5 A
100
DC current gain
hFE (3)
VCE = 2 V, IC = 1 A
60
VCE (sat) (1) IC = 0.5 A, IB = 50 mA
0.3
V
Collector emitter saturation voltage
VCE (sat) (2) IC = 1 A, IB = 100 mA
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 100 mA
1.5
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
150
MHZ
Collector output capacitance
Cob
VCB = 10 V, IE = 0,f = 1MHZ
14
pF
Rise time
tr
0.05
Storage time
tstg
0.4
Switching time
Fall time
tf
IB1 = −IB2 = 100 mA
Duty cycle ≤ 1%
0.15
μs
Marking
20 μs
VCC = 24 V
Output
IB2
IB1
Input
Lot code
A line indicates
lead (Pb)-free
package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
C6087



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