2SC2230A datasheet(2/5 Pages) TOSHIBA

Part #	2SC2230A

Description	Silicon NPN Triple Diffused Type (PCT Process)

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC2230,2SC2230A

2006-11-09

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 200 V, IE = 0

―

0.1

μA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

―

0.1

μA

hFE (1)

(Note)

VCE = 10 V, IC = 10 mA

120

―

400

DC current gain

hFE (2)

VCE = 10 V, IC = 50 mA

―

Collector-emitter saturation voltage

VCE (sat)

IC = 50 mA, IB = 5 mA

―

0.5

Base-emitter voltage

VBE

VCE = 10 V, IC = 1 mA

0.50

0.60

0.70

Transition frequency

VCE = 10 V, IC = 10 mA

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

7.0

Note: hFE (1) classification Y: 120 to 240, GR: 200 to 400

Marking

Part No.

(or abbreviation code)

Part No.

C2230

2SC2230

C2230A

2SC2230A

C2230

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Characteristics

indicator

Part No. (or abbreviation code) *1

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