2SC3998 datasheet(1/3 Pages) ISC

Part #	2SC3998

Description	Silicon NPN Power Transistor

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC3998

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 800V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):5V(Max) @IC= 20A

APPLICATIONS

· High voltage color display horizontal deflection output

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

25

A

IC

Pulse Collector Current-Continuous

50

A

PC

Total Power Dissipation

@ TC=25℃

250

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.5

℃

/W

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