MT6L58AFS

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT6L58AFS

VHF~UHF Band Low-Noise Amplifier Applications

Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.

Superior noise characteristics

Superior performance in buffer and oscillator applications.

Mounted Devices

Q1

Q2

Corresponding three-pin products:

TESM(fSM) mold products

MT3S06T

(MT3S06FS)

MT3S03AT

(MT3S03AFS)

Absolute Maximum Ratings (Ta

= 25°C)

Characteristic

Symbol

Rating

Unit

Collector- base voltage

10

10

V

Collector- emitter voltage

5

5

V

Emitter- base voltage

1.5

2

V

Collector current

15

40

mA

Base current

7

10

mA

100

Collector power dissipation

110 (Note 2)

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

× 1.0 mm (t), mounted on a glass-epoxy printed circuit board.

Note 2: During two-element operation

Pin Assignment

(top view)

Unit: mm

0.1±0.05

6

0.8±0.05

1.0±0.05

1

2

0.1±0.05

3

5

4

1. Collector1 (C1)

2. Emitter1 (E1)

3. Collector2 (C2)

4. Base2 (B2)

5. Emitter2 (E2)

6. Base1 (B1)

JEDEC

―

JEIAJ

―

Toshiba

2-1F1A

Weight: 0.001g (typ.)

15

6

4

1

3

2

5

6

4

1

3

2

Q1

Q2

5

fS6