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IXFN150N65X2 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN150N65X2 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISFM1325 eq IXFN150N65X2 N-Channel MOSFET www.iscsemi.com 1 DESCRIPTION · Drain Current -ID= 145A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converter · PFC Circuits · Power Supplies ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-continuous@ TC=25℃ 145 A IDM Pulse Drain Current 300 A PD Total Dissipation@TC=25℃ 1040 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.12 ℃ /W D G S S SOT-227 package |
Similar Part No. - IXFN150N65X2 |
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Similar Description - IXFN150N65X2 |
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