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STM32F412RGU6P Datasheet(PDF) 87 Page - STMicroelectronics |
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STM32F412RGU6P Datasheet(HTML) 87 Page - STMicroelectronics |
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87 / 201 page ![]() DocID028087 Rev 7 87/201 STM32F412xE/G Electrical characteristics 166 6.3.6 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 22: Current consumption measurement scheme. All the run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to CoreMark code. VPDRhyst(2) PDR hysteresis - - 40 - mV VBOR1 Brownout level 1 threshold Falling edge 2.13 2.19 2.24 V Rising edge 2.23 2.29 2.33 VBOR2 Brownout level 2 threshold Falling edge 2.44 2.50 2.56 Rising edge 2.53 2.59 2.63 VBOR3 Brownout level 3 threshold Falling edge 2.75 2.83 2.88 Rising edge 2.85 2.92 2.97 VBORhyst(2) BOR hysteresis - - 100 - mV TRSTTEMPO (2)(3) POR reset timing - 0.5 1.5 3.0 ms IRUSH(2) In-Rush current on voltage regulator power- on (POR or wakeup from Standby) - - 160 200 mA ERUSH(2) In-Rush energy on voltage regulator power- on (POR or wakeup from Standby) VDD = 1.7 V, TA = 125 °C, IRUSH = 171 mA for 31 µs -- 5.4 µC 1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 2. Guaranteed by design, not tested in production. 3. The reset timing is measured from the power-on (POR reset or wakeup from VBAT) to the instant when first instruction is fetched by the user application code. Table 21. Embedded reset and power control block characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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