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STM32F412RGU6P Datasheet(PDF) 121 Page - STMicroelectronics

Part # STM32F412RGU6P
Description  Arm®-Cortex®-M4 32b MCUFPU, 125 DMIPS, 1MB Flash, 256KB RAM, USB OTG FS, 17 TIMs, 1 ADC, 17 comm. interfaces
PDF  201 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F412RGU6P Datasheet(HTML) 121 Page - STMicroelectronics

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DocID028087 Rev 7
121/201
STM32F412xE/G
Electrical characteristics
166
6.3.14
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
•
A supply overvoltage is applied to each power supply pin
•
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latchup standard.
Table 54. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic
discharge voltage
(human body model)
TA = +25 °C conforming to JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic
discharge voltage
(charge device model)
TA = +25 °C conforming to ANSI/ESD STM5.3.1,
UFBGA144, UFBGA100, LQFP100, LQFP64,
UFQFPN48
4500
TA = +25 °C conforming to ANSI/ESD STM5.3.1,
WLCSP64
3400
TA = +25 °C conforming to ANSI/ESD STM5.3.1,
LQFP144
3250
1. Guaranteed by characterization, not tested in production.
Table 55. Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = +125 °C conforming to JESD78A
II level A



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