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AM0912-080 Datasheet(PDF) 1 Page - STMicroelectronics

Part # AM0912-080
Description  AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS
PDF  3 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AM0912-080 Datasheet(HTML) 1 Page - STMicroelectronics

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September 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 90 W MIN. WITH 13 dB GAIN
.
BANDWIDTH 225 MHz
DESCRIPTION
The AM0912-080 Avionics power transistor is a
broadband, high peak pulse power device speci-
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
DME/TACAN.
This device is also designed for specialized ap-
plications including JTIDS where reduced power
provided under pulse formats utilizing short pulse
widths and high burst or overall duty cycles.
The AM0 912-08 0 is ho used in the unique
AMPAC™ Hermetic Metal/Ceramic package with
internal Input/Output matching structures.
PIN CONNECTION
BRANDING
0912-80
ORDER CODE
AM0912-080
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤100˚C)
220
W
IC
Device Current*
7.0
A
VCC
Collector-Supply Voltage*
50
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
0.80
°C/W
*Applies only to rated RF amplifier operation
AM0912-080
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
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