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CSD18533KCS Datasheet(PDF) 3 Page - Texas Instruments |
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CSD18533KCS Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 14 page  4 Specifications 4.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0V, ID = 250μA 60 V IDSS Drain-to-source leakage current VGS = 0V, VDS = 48V 1 μA IGSS Gate-to-source leakage current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250μA 1.5 1.9 2.3 V RDS(on) Drain-to-source on-resistance VGS = 4.5V, ID = 75A 6.9 9.0 mΩ VGS = 10V, ID = 75A 5.0 6.3 mΩ gfs Transconductance VDS = 30V, ID = 75A 150 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0V, VDS = 30V, ƒ = 1MHz 2420 3025 pF Coss Output capacitance 300 375 pF Crss Reverse transfer capacitance 7 9.1 pF RG Series gate resistance 1.4 2.8 Ω Qg Gate charge total (4.5V) VDS = 30V, ID = 75A 14 17 nC Qg Gate charge total (10V) 28 34 nC Qgd Gate charge gate-to-drain 3.9 nC Qgs Gate charge gate-to-source 9.4 nC Qg(th) Gate charge at Vth 4.6 nC Qoss Output charge VDS = 30V, VGS = 0V 31 nC td(on) Turn on delay time VDS = 30V, VGS = 10V, IDS = 75A, RG = 0Ω 5.7 ns tr Rise time 4.8 ns td(off) Turn off delay time 13 ns tf Fall time 3.2 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 75A, VGS = 0V 0.8 1 V Qrr Reverse recovery charge VDS= 30V, IF = 75A, di/dt = 300A/μs 97 nC trr Reverse recovery time 49 ns 4.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance 0.8 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W www.ti.com CSD18533KCS SLPS362D – SEPTEMBER 2012 – REVISED MARCH 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD18533KCS |
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