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BAS16 Datasheet(PDF) 1 Page - DAESAN ELECTRONIC CORP. |
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BAS16 Datasheet(HTML) 1 Page - DAESAN ELECTRONIC CORP. |
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1 / 3 page ![]() BAS16 SMALL SIGNAL SWITCHING DIODES Features (T A = 25 unless otherwise noted) Parameter S ymbol Value Unit R everse Voltage V R 75 V Peak R everse Voltage V R M 100 V Forward C urrent (continuous) IF 250 mA Non-R epetitive Peak Forward C urrent t = 1 μs 2.0 t = 1ms IFS M 1.0 A t = 1s 0.5 Power Dissipation at T amb = 25 P tot 350(1) mW Thermal R esistance Junction to Ambient Air R thJA 430(1) /W J unction Temperature T j 150 S torage Temperature R ange T S 65 to +150 Note: (1) Device on F iberglass S ubstrate, see layout on second page .016 (0.4) .037(0.95) .037(0.95) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 Top V iew .102 (2.6) .110 (2.8) .094 (2.4) S ilicon E pitaxial P lanar Diode · Fast switching diode in case S OT-23, especially suited for automatic insertion. S OT -23 Mechanical Data C as e: S OT-23 P lastic Package Weight: approx. 0.008g MMMMarking C ode: A6 Mounting P ad L ayout 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) Top V iew Marking C ode: · Maximum R atings and T hermal C haracteris tics ℃ ℃ ℃ ℃ ℃ - |
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