KSC2330 datasheet(1/2 Pages) ISC

Part #	KSC2330

Description	Silicon NPN Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon NPN Power Transistor

KSC2330

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 300V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): 0.5V(Max) @IC= 10mA

APPLICATIONS

·

Audio power amplifiers

·

Relay & solenoid drivers

·

Motor controls

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

0.1

A

PC

Collector Power Dissipation

@ TC=25℃

1.0

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

BVCBO

Collector-Base Breakdown Voltage

IC= 100uA; IE= 0A

300

--

V

BVCEO

Collector-Emitter Breakdown Voltage

IC= 5mA; IB= 0A

300

--

V

BVEBO

Emitter-Base Breakdown Voltage

IE= 100uA; IC= 0A

7.0

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 10mA; IB= 1mA

--

0.5

V

ICBO

Collector Cutoff Current

VCB= 200V; IE= 0A

--

0.1

uA

hFE

DC Current Gain

IC= 20mA; VCE= 10V

40

--

240

--

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