5 Device and Documentation Support

5.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on

Notifications to register and receive a weekly digest of any product information that has changed. For change

details, review the revision history included in any revised document.

5.2 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

5.3 Trademarks

NexFET™ is a trademark of Texas Instruments.

TI E2E™ is a trademark of Texas Instruments.

All trademarks are the property of their respective owners.

5.4 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

5.5 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

6 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision A (January 2015) to Revision B (March 2024)

Page

• Updated the numbering format for tables, figures, and cross-references throughout the document................. 1

Changes from Revision * (October 2012) to Revision A (January 2015)

Page

• Added part number to title ................................................................................................................................. 1

• Increased the TC = 25° continuous drain current to 89A....................................................................................1

• Increased the TC = 125° continuous drain current to 63A .................................................................................1

• Increased the pulsed drain current to 238A ...................................................................................................... 1

• Increased the max power dissipation to 115W................................................................................................... 1

• Increased the max operating junction and storage temperature to 175°............................................................1

• Updated the pulsed current conditions .............................................................................................................. 1

• Updated Figure 4-1 from a normalized RθJA to an RθJC curve........................................................................... 4

• Updated Figure 4-6 to extend to 175°C .............................................................................................................4

• Updated Figure 4-8 to extend to 175°C .............................................................................................................4

• Updated the SOA in Figure 4-10 ....................................................................................................................... 4

• Updated Figure 4-12 to extend to 175°C ...........................................................................................................4

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CSD18504KCS

SLPS365B – OCTOBER 2012 – REVISED MARCH 2024

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