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CSD19533KCS Datasheet(PDF) 4 Page - Texas Instruments

Part # CSD19533KCS
Description  CSD19533KCS, 100V N-Channel NexFET™ Power MOSFET
PDF  14 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

CSD19533KCS Datasheet(HTML) 4 Page - Texas Instruments

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4.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
Figure 4-1. Transient Thermal Impedance
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0.4
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VDS - Drain-to-Source Voltage (V)
VGS =10V
VGS =8V
VGS =6V
G001
Figure 4-2. Saturation Characteristics
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VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
Figure 4-3. Transfer Characteristics
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Qg - Gate Charge (nC)
ID = 55A
VDS = 50V
G001
Figure 4-4. Gate Charge
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
Figure 4-5. Capacitance
CSD19533KCS
SLPS482C – DECEMBER 2013 – REVISED MAY 2024
www.ti.com
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Product Folder Links: CSD19533KCS



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