BUT32V datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthc-h

Thermal Resistance Ju nction- case

Max

Thermal Resistance Case-heatsin k With Conductive

Grease Applied

Max

0.5

0.05

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER

Collecto r Cu t-of f

Current (RBE =5

Ω)

VCE =VCEV

Tj = 100

ICEV

Collecto r Cu t-of f

Current (VBE =-5)

VCE =VCEV

Tj = 100

IEBO

Emitter Cut-off Current

(IC =0)

VEB =5 V

VCEO(SUS) * Collecto r-Emitter

Sustaining Voltage

IC =0.2 A

L = 25 mH

Vclamp = 300 V

300

hFE

∗

DC Current Gain

IC =40 A

VCE =5 V

VCE(sat)

∗ Collector-Emitter

Satu ration Vo ltage

IC =40 A

IB =4 A

IC =40 A

IB =4 A

Tj = 100

0.6

1.2

0. 9

1. 9

VBE(sat)

∗ Base-Emitter

Satu ration Vo ltage

IC =40 A

IB =4 A

IC =40 A

IB =4 A

Tj = 100

1.12

1.1

1. 3

diC/dt

Rateof Riseof

On-state Collector

VCC =3 00 V

RC =0

tp =3

µs

IB1 =6 A

Tj = 100

120

180

µs

VCE (3

µs) Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC =6 .2

Ω

IB1 =6 A

Tj =1 00

VCE(5

µs) Collector-Emitter

Dynamic Voltage

VCC = 300 V

RC =6 .2

Ω

IB1 =6 A

Tj =1 00

1.8

Storage Time

Fall Time

Cross-over Time

IC =40 A

VCC = 250 V

VBB =-5 V RBB =

0.6 Ω

Vclamp = 300 V

IB1 =4 A

L= 0. 3 mH

Tj = 100

1.9

0.12

0.35

0. 4

0. 7

µs

VCEW

Maximu m Collector

Emitter Voltage

With ou t Snubber

ICWoff =60 A IB1 =4 A

VBB =-5 V

VCC =5 0 V

L= 42

µHRBB =0.6 Ω

Tj =1 25

300

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUT32V

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