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STPS5H100-Y Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS5H100-Y Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage, Tj = -40 °C to +175 °C 100 V IF(RMS) Forward rms current 10 A IF(AV) Average forward current Tc = 165 °C, δ = 0.5 5 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 518 W Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range(1) -40 to +175 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal parameters Symbol Parameter Max. value Unit Rth(j-c) Junction to case 2.5 °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 3.5 µA Tj = 125 °C - 1.3 4.5 mA VF(2) Forward voltage drop Tj = 25 °C IF = 5 A - 0.73 V Tj = 125 °C - 0.57 0.61 Tj = 25 °C IF = 10 A - 0.85 Tj = 125 °C - 0.66 0.71 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.51 x IF(AV) + 0.02 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode STPS5H100-Y Characteristics DS6906 - Rev 3 page 2/9 |
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