Figure 7. Junction capacitance versus reverse voltage

applied (typical values, per diode)

1

2

5

10

20

50

100

100

200

500

1000

C(pF)

V (V)

R

F=1MHz

V

=30mV

T =25°C

OSC

RMS

j

Figure 8. Forward voltage drop versus forward current

(maximum values, per diode)

I

(A)

FM

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

1.0

10.0

100.0

V

(V)

FM

T =125°C

(typical values)

j

T =25°C

j

T =125°C

j

T =150°C

(typical values)

j

Figure 9. Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board

FR4, eCu = 35 µm) (D²PAK)

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

Rth(j-a)(°C/W)

SCu(cm²)

STPS20H100C

Characteristics (curves)

DS1216 - Rev 10

page 5/18