Characteristics

FERD30M45C

2/10

DocID023771 Rev 3

1

Characteristics

When diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode1) x Rth(j-c)(per diode) + P(diode2) x Rth(c)

Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

45

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current,

δ = 0.5

Tc = 155 °C

Per diode

Per device

15

30

A

Tc = 155 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

250

A

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature

175

°C

Tj

Maximum operating temperature on D²PAK

(DC forward current without reverse bias, t = 1 hour)(1)

200

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink.

dP tot

dTj

---------------

1

Rth j

a

–

()

--------------------------

<

Table 3. Thermal resistance

Symbol

Parameter

Value (max)

Unit

Rth(j-c)

Junction to case

Per diode

1.6

°C/W

Total

1.05

Rth(c)

Coupling

0.5