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PM8805 Datasheet(PDF) 13 Page - STMicroelectronics

Part # PM8805
Description  IEEE 802.3bt PoE-PD interface with embedded dual active bridge
PDF  45 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PM8805 Datasheet(HTML) 13 Page - STMicroelectronics

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DS12813 Rev 1
13/45
PM8805
Electrical specifications
45
3.4
Electrical characteristics
(VDD=VOB=48 V, 1 nF from VCP to VDD, 100 nF on VB, TA = -40°C to 85°C unless
otherwise specified(a).)
a. Minimum and Maximum limits are guaranteed by test, design, or statistical correlation. Typical values represent
the most likely parametric norm at TA =25 °C, and are provided for reference only.
Table 6. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Undervoltage UVLO
Vuvlo_rising
UVLO release
Measured between PoE inputs(1)
VDD rising
38.0
41.5
V
Vuvlo_falling
UVLO lock-out
Measured between PoE inputs
VDD(1) falling
30.5
33.5
V
Vuvlo_hyst
UVLO hysteresis
VDD falling
7.5
V
Tduvlo_falling
UVLO lock-out delay
VDD falling
100
μs
Input bridges
Rdson_br
MOSFET Ron
30.5< VDD<57V, I=1A
90
150
Vbron
Bridge ON max. voltage drop
30.5< VDD<57V, I=1A
180
300
mV
Vbroff
Bridge OFF max. voltage drop
VDD<23V, I=44mA
1.4
1.8
V
Unbal
Bridge to Bridge resistance
unbalance
30.5< VDD<57V, I=1A, bridges ON
30
%
Vbfd
Backfeed voltage
100kΩ resistance between
unpowered PoE inputs(1), VDD=57V
2.7
V
Ileak
Leakage current
VDD=57V, current drawn by any
bridge input(1)
25
μA
ZCD_HS_thr
High-side MOSFET
comparator threshold
Measured between any bridge
input(1) and VDD
-25
mV
ZCD_LS_thr
Low-side MOSFET
comparator threshold
Measured between any bridge input
and relevant ground(1)
10
mV
ZCD_hyst
Comparators hysteresis
10
mV
Td_ZCD
Comparators delay
5
15
μs
Charge pump(2)
Vcp
Charge pump voltage
Measured wrt VDD 30.5< VDD<57V
10nF on VCP pin
6.8
9.8
V
Icp
Capacitor charging current
VCP = VDD+7V
50
μA
Detection and classification
Von_det
Signature enable
Measured between PoE inputs(1)
VDD rising
2.5
V
Voff_det
Signature disable
Measured between PoE inputs(1)
VDD rising
10.5
13.0
V



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