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TPD2EUSB30 Datasheet(PDF) 8 Page - Texas Instruments |
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TPD2EUSB30 Datasheet(HTML) 8 Page - Texas Instruments |
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8 / 28 page ![]() 7 Detailed Description 7.1 Overview The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum contact level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 μs) peak pulse current ratings per IEC 61000-4-5 (surge) specification. 7.2 Functional Block Diagrams GND D2+ D2- D1+ D1- Figure 7-1. TPD4EUSB30 Circuit GND D+ D– Figure 7-2. TPD2EUSB30/A Circuit 7.3 Feature Description TPDxEUSB30/A is a family of uni-directional Electrostatic Discharge (ESD) protection devices with low capacitance. Each IO line is rated to dissipate ESD strikes at or above the maximum level specified in the IEC 61000-4-2 (Level 4 Contact) international standard. The TPDxEUSB30/A's low loading capacitance makes it ideal for protection super speed high-speed signals. 7.4 Device Functional Modes The TPDxEUSB30/A family of devices are passive integrated circuits that activate whenever voltages above VBR or below the lower diodes Vforward (–0.6V) are present upon the circuit being protected. During ESD events, voltages as high as ±8 kV (contact) can be directed to ground via the internal diode network. Once the voltages on the protected lines fall below the trigger voltage of the device (usually within 10's of nano-seconds) the device reverts to passive. TPD2EUSB30, TPD2EUSB30A, TPD4EUSB30 SLVSAC2G – AUGUST 2010 – REVISED JUNE 2021 www.ti.com 8 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: TPD2EUSB30 TPD2EUSB30A TPD4EUSB30 |
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