2SA1979S datasheet(1/2 Pages) ISC

Part #	2SA1979S

Description	Silicon PNP Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon PNP Power Transistor

2SA1979S

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -32V(Min)

· SOT-23 Package

APPLICATIONS

· General Electronic Equipment

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-32

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-500

mA

PC

Collector Power Dissipation

350

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNI

T

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -1mA, IB= 0A

-32

--

V

ICBO

Collector-Base Cut-Off Current

VCB= -40V, IE= 0A

--

-0.1

uA

IEBO

Emitter Cuto-ff Current

VEB= -5V, IC= 0A

--

-0.1

uA

hFE*

DC Current Gain

IC= -100mA, VCE= -1V

70

--

240

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -100mA, IB= -10mA

--

-0.25

V

hFE* Rank: O: 70-140, Y: 120-240

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