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BUF460AV Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUF460AV Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISB3096 eq BUF460AV NPN Transistor Power Module www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 450V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 0.35V(Typ) @IC= 30A APPLICATIONS · Welding Equipment · Motor Control · SMPS · UPS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage (VBE = -5 V) 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 80 A ICM Collector Peak Current (tp = 10 ms) 160 A IB Base Current-Continuous 18 A IBM Base Peak Current (tp = 10 ms) 27 A PC Total Dissipation @TC= 25℃ 270 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ VISO Insulation Withstand Voltage (AC-RMS) 2500 V SOT-227 package 3 4 2 1 |
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