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TSI200B1 Datasheet(PDF) 6 Page - STMicroelectronics

Part # TSI200B1
Description  TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TSI200B1 Datasheet(HTML) 6 Page - STMicroelectronics

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TSIxxB1
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Symbol
Parameter
Value
Unit
IPP
Non repetitive peak on-sate current (see note 1)
10/1000
µs (open circuit voltage wave shape 10/100 µs)
5/310
µs (open circuit voltage wave shape 10/700 µs)
2/10
µs (open circuit voltage wave shape 2/10 µs)
30
40
75
A
IF
Maximum DC current
0.2
A
ITSM
Non repetitive surge peak on-state current
tp=20ms
t=1s
5
3.5
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 55 to +150
150
°C
TL
Maximum lead temperature for soldering during 10 s
260
°C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Note 1 : Pulse waveform :
10/1000
µst
r=10µstp=1000µs
5/310
µst
r=5µstp=310µs
2/10
µst
r=2µstp=10µs
100
50
%I
PP
t
t
r
p
0
t
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
170
°C/W
THERMAL RESISTANCE
Symbol
Parameter
VRM
Stand-off voltage
VBO
Breakover voltage
VBR
Breakdown voltage
IH
Holding current
IBO
Breakover current
IRM
Leakage current at VRM
IPP
Peak pulse current
C
Capacitance
αT
Temperature coefficient
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
V
I
V
RM
BO
V
RM
I
H
IBO
PP
I
I



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