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T2050H Datasheet(PDF) 4 Page - STMicroelectronics

Part # T2050H
Description  High temperature 20 A Snubberless??TRIACs
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T2050H Datasheet(HTML) 4 Page - STMicroelectronics

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Characteristics
T2035H, T2050H
4/10
Figure 3.
On-state rms current versus
ambient temperature
Figure 4.
Variation of thermal impedance
versus pulse duration
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
25
50
75
100
125
150
I
T(RMS) (A)
α=180 °
D²PAK
S
CU=1 cm²
Tamb(°C)
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Z
th(°C/W)
Z
th(j-a)
Z
th(j-c)
tP(s)
Figure 5.
On-state characteristics (maximum
values)
Figure 6.
Surge peak on-state current versus
number of cycles
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
ITM(A)
T
j=25 °C
T
j=150 °C
T
j max. :
V
T0 = 0.80 V
R
D = 19 mΩ
VTM(V)
0
20
40
60
80
100
120
140
160
180
200
220
1
10
100
1000
I
TSM(A)
Non repetitive
T
j initial=25 °C
Repetitive
T
c=110 °C
One cycle
t=20ms
Number of cycles
Figure 7.
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms and corresponding
value of I2t
Figure 8.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
100
1000
10000
0.01
0.10
1.00
10.00
I
TSM(A), I²t (A²s)
Tj initial=25 °C
dI/dt limitation: 50 A/µs
I
TSM
I²t
tP(ms)
0.0
0.5
1.0
1.5
2.0
2.5
-40
-20
0
20
40
60
80
100
120
140
160
I
GT,IH,IL [Tj]/ IGT,IH,IL [Tj=25°C]
I
GT
I
H & IL
Tj(°C)



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