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AT25DF256 Datasheet(PDF) 13 Page - Renesas Technology Corp

Part # AT25DF256
Description  256-Kbit, 1.65 V Minimum SPI Serial Flash Memory with Dual-Read Support
PDF  47 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25DF256 Datasheet(HTML) 13 Page - Renesas Technology Corp

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DS-AT25DF256-035 Rev.G
Page 13
2024-01-08
© 2024 Renesas Electronics
AT25DF256 Datasheet
7.2
Dual-Output Read Array
The Dual-Output Read Array command is similar to the standard Read Array command and can be used to
sequentially read a continuous stream of data from the device by providing the clock signal once the initial starting
address has been specified. Unlike the standard Read Array command, however, the Dual-Output Read Array
command allows two bits of data to be clocked out of the device on every clock cycle, rather than just one.
The Dual-Output Read Array command can be used at any clock frequency, up to the maximum specified by
fRDDO. To perform the Dual-Output Read Array operation, the CS pin must first be asserted, and then the opcode
3Bh must be clocked into the device. After the opcode has been clocked in, the three address bytes must be
clocked in to specify the location of the first byte to read within the memory array. Following the three address
bytes, a single dummy byte must also be clocked into the device.
After the three address bytes and the dummy byte have been clocked in, additional clock cycles result in data
being output on both the SO and SIO pins. The data is always output with the MSB of a byte first, and the MSB is
always output on the SO pin. During the first clock cycle, bit seven of the first data byte is output on the SO pin,
while bit six of the same data byte is output on the SIO pin. During the next clock cycle, bits five and four of the
first data byte are output on the SO and SIO pins, respectively. The sequence continues with each byte of data
being output after every four clock cycles. When the last byte (007FFFh) of the memory array has been read, the
device continues reading from the beginning of the array (000000h). No delays are incurred when wrapping
around from the end of the array to the beginning of the array. Deasserting the CS pin stops the read operation
and puts the SO and SI pins into a high-impedance state. The CS pin can be deasserted at any time and does not
require that a full byte of data be read.
Figure 9. Dual-Output Read Array



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