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AT45DB641E Datasheet(PDF) 21 Page - Renesas Technology Corp |
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AT45DB641E Datasheet(HTML) 21 Page - Renesas Technology Corp |
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21 / 78 page ![]() DS-AT45DB641E-027 Rev. O Page 21 6/30/23 © 2023 Renesas Electronics AT45DB641E Datasheet 7.8 Block Erase The Block Erase command can be used to erase a block of eight pages at one time. This command is useful when needing to pre-erase larger amounts of memory and is more efficient than issuing eight separate Page Erase commands. To perform a Block Erase with the standard DataFlash page size (264 bytes), an opcode of 50h must be clocked into the device followed by three address bytes comprised of 12 page address bits (PA14 - PA3), and 12 dummy bits. The 12 page address bits are used to specify which block of 8 pages is to be erased. To perform a Block Erase with the binary page size (256 bytes), an opcode of 50h must be clocked into the device followed by three address bytes comprised of 1 dummy bit, 12 page address bits (A22 - A11), and 11 dummy bits. The 12 page address bits are used to specify which block of 8 pages is to be erased. When a low-to-high transition occurs on the CS pin, the device erases the selected block of eight pages. The erase operation is internally self-timed and takes place in a maximum time of tBE. During this time, the RDY/BUSY bit in the Status Register indicates that the device is busy. The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If an erase error arises, it is indicated by the EPE bit in the Status Register. Table 2. Block Erase Addressing PA14 PA13 PA12 PA11/ PA10 PA9/ PA8/ PA7/ PA6/ PA5/ PA4/ PA3/ PA2/ PA1/ PA0/ Block /A22 /A21 /A20 A19 /A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 000 0 000 00000 X X X 0 000 0 000 00001 X X X 1 000 0 000 00010 X X X 2 000 0 000 00011 X X X 3 • • • • •••••• ••••• • • • • • •••••• ••••• • • • • • •••••• ••••• • 111 1 111 11100 X X X 4092 111 1 111 11101 X X X 4093 111 1 111 11110 X X X 4094 111 1 111 11111 X X X 4095 |
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