Silicon NPN Darlington Power Transistor

BU941ZPFI

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CEO

Collector-Emitter Voltage

IC= 10mA; IB= 0A

350

--

V

ICEO

Collector Cutoff Current

VCE= 300V; IB= 0A

--

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0A

--

20

mA

hFE

DC Current Gain

IC= 5A ; VCE= 10V

300

--

--

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 8A; IB= 100mA

--

1.8

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A; IB= 250mA

--

1.8

V

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 12A; IB= 300mA

--

2.0

V

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 8A; IB= 100mA

--

2.2

V

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 10A; IB= 250mA

--

2.5

V

VBE(sat)-3

Base-Emitter Saturation Voltage

IC= 12A; IB= 300mA

--

2.7

V

VF

Diode Forward Voltage

IF= 10A

--

2.5

V

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

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