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AP2N65MSI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP2N65MSI
Description  650V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP2N65MSI
650V N-Channel Enhancement Mode MOSFET
AP2N65MSI REV1.0
永源微電子科技有限公司
Description
The AP2N65MSI-H is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS = 650V ID =2.0A
RDS(ON) < 6.0Ω @ VGS=10V （Type：4.5Ω）
Application
LED
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP2N65MSI
SOT223-3L
AP2N65MSI XXX YYYY
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
650
V
ID
Continuous Drain Current
2.0
A
IDM
Pulsed Drain Current
(note1)
1.0
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy (note2)
50
mJ
PD
Power Dissipation (TC = 25ºC)
25
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ºC
RthJC
Thermal Resistance, Junction-to-Case
4
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
125
ºC/W


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