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AP3N04AI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP3N04AI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP3N04AI 40V N-Channel Enhancement Mode MOSFET AP3N04AI RVE1.0 永源微電子科技有限公司 Description The AP3N04AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =3A RDS(ON) < 40mΩ @ VGS=10V (Type:28mΩ) Application Wireless charging Boost driver LED Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3N04AI SOT23L 3N04A-AP 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ± 20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 3 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 2.9 A IDM Pulsed Drain Current2 15 A EAS Single Pulse Avalanche Energy3 16.2 mJ PD@TA=25℃ Total Power Dissipation4 1.67 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 125 ℃ /W RθJC Thermal Resistance Junction-Case1 30 ℃ /W |
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