AP3P04AI

-40V P-Channel Enhancement Mode MOSFET

AP3P04AI RVE4.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-40

-46

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.018

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-3A

---

65

72

mΩ

VGS=-4.5V , ID=-2A

---

89

100

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.0

-1.5

-2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

2.5

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=-24V , VGS=0V ,TJ=25

℃

---

---

-1

uA

VDS=-24V , VGS=0V ,TJ=55

℃

---

---

-5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-3A

---

5.8

---

S

Qg

Total Gate Charge (-4.5V)

VDS=-32V , VGS=-4.5V , ID=-

3A

---

6.4

---

nC

Qgs

Gate-Source Charge

---

2.1

---

Qgd

Gate-Drain Charge

---

2.5

---

Td(on)

Turn-On Delay Time

VDD=-20V , VGS=-4.5V ,

RG=3.3Ω, ID=-3A

---

4.2

---

ns

Tr

Rise Time

---

23

---

Td(off)

Turn-Off Delay Time

---

26.8

---

Tf

Fall Time

---

20.6

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

620

---

pF

Coss

Output Capacitance

---

65

---

Crss

Reverse Transfer Capacitance

---

53

---

IS

Continuous Source Current1,4

VG=VD=0V , Force Current

---

---

-5.2

A

ISM

Pulsed Source Current2,4

---

---

-16.1

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1

V

Note :

1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150

℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.