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AP3P06AI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP3P06AI
Description  -60V P-Channel Enhancement Mode MOSFET
PDF  9 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP3P06AI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP3P06AI
-60V P-Channel Enhancement Mode MOSFET
AP3P06AI Rve3.9
臺灣永源微電子科技有限公司
Description
The AP3P06AI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = -60V ID =-3 A
RDS(ON) < -180mΩ @ VGS=-10V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP3P06AI
MS09
3000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±
20
V
ID@TA=25℃
Continuous Drain Current, VGS @ -10V1
-3.3
A
ID@TA=70℃
Continuous Drain Current, VGS @ -10V1
-1.4
A
IDM
Pulsed Drain Current2
-7
A
PD@TA=25℃
Total Power Dissipation3
1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
125
℃
/W
RθJC
Thermal Resistance Junction-Case1
80
℃
/W
SOT-23


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