AP10H04DF

40V N+N-Channel Enhancement Mode MOSFET

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

40

47

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=12A

---

6.9

8.5

mΩ

VGS=4.5V , ID=10A

---

10.5

15

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.5

2.5

V

IDSS

Drain-Source Leakage Current

VDS=32V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=32V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

1.7

---

Ω

Qg

Total Gate Charge (4.5V)

VDS=20V , VGS=4.5V , ID=12A

---

5.8

---

nC

Qgs

Gate-Source Charge

---

3

---

Qgd

Gate-Drain Charge

---

1.2

---

Td(on)

Turn-On Delay Time

VDD=15V , VGS=10V ,

RG=3.3Ω

ID=1A

---

14.3

---

ns

Tr

Rise Time

---

5.6

---

Td(off)

Turn-Off Delay Time

---

20

---

Tf

Fall Time

---

11

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

690

---

pF

Coss

Output Capacitance

---

193

---

Crss

Reverse Transfer Capacitance

---

38

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

20

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=31A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

AP10H04DF RVE1.0

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