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AP30G03GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP30G03GD
Description  30V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP30G03GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP30G03GD
30V N+P-Channel Enhancement Mode MOSFET
AP30G03GD RVE1.0
永源微電子科技有限公司
Description
The AP30G03GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =38A
RDS(ON) < 12mΩ @ VGS=10V （Type：8.0mΩ）
VDS = -30V ID =-35A
RDS(ON) < 20mΩ @ VGS=-10V（Type：16mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP30G03GD
TO-252-4L
AP30G03GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
±
20
±
20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
38
-35
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
21
-18.1
A
IDM
Pulsed Drain Current2
90
-85
A
EAS
Single Pulse Avalanche Energy3
22
22
mJ
IAS
Avalanche Current
28
23
A
PD@TA=25℃
Total Power Dissipation4
46
46
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
60
℃
/W


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