AP30G04GD

40V N+P-Channel Enhancement Mode MOSFET

AP30G04D REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25

℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

40

46

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=15A

---

11

18

mΩ

VGS=4.5V , ID=10A

---

17

23

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.8

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-4.8

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=32V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=32V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±25V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=15A

---

34

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

2.1

---

Ω

Qg

Total Gate Charge (4.5V)

VDS=32V , VGS=4.5V , ID=15A

---

10

---

nC

Qgs

Gate-Source Charge

---

2.55

---

Qgd

Gate-Drain Charge

---

4.8

---

Td(on)

Turn-On Delay Time

VDD=20V , VGS=10V , RG=3.3Ω

ID=15A

---

2.8

---

ns

Tr

Rise Time

---

12.8

---

Td(off)

Turn-Off Delay Time

---

21.2

---

Tf

Fall Time

---

6.4

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

1013

---

pF

Coss

Output Capacitance

---

107

---

Crss

Reverse Transfer Capacitance

---

76

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

40

A

ISM

Pulsed Source Current2,5

---

---

85

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1.2

V

trr

Reverse Recovery Time

IF=15A , dI/dt=100A/µs ,

TJ=25

℃

---

10

---

nS

Qrr

Reverse Recovery Charge

---

3.1

---

nC

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The EAS data shows Max. rating . The test condition is VDD=32V,VGS=10V,L=0.1mH,IAS=28A

4

、The power dissipation is limited by 175℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.