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AP40H03DF2 Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP40H03DF2
Description  30V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP40H03DF2 Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP40H03DF2
30V N+N-Channel Enhancement Mode MOSFET
AP40H03DF2 REV1.0
永源微電子科技有限公司
Description
The AP40H03DF2 uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS=30V ID =40A
RDS(ON) < 10mΩ @ VGS=10V
（Type：7.8mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP40H03DF2
DFN3*3B-8L
AP40N03DF2 XXXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
40
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
23
A
IDM
Pulsed Drain Current2
120
A
PD@TC=25
℃
Total Power Dissipation
137.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
℃/W
RθJC
Thermal Resistance Junction-Case1
4
℃/W


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