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AP40H06DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP40H06DF
Description  60V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP40H06DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP40H06DF
60V N+N-Channel Enhancement Mode MOSFET
AP40H06DF RVE1.1
永源微電子科技有限公司
Description
The AP40H06DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 60V ID =40A
RDS(ON) < 32mΩ @ VGS=10V （Type：20mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP40H06DF
PDFN3*3-8L
AP40H06DF XXXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
40
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
18
A
IDM
Pulsed Drain Current2
114
A
EAS
Single Pulse Avalanche Energy3
25.5
mJ
IAS
Avalanche Current
22
A
PD@TC=25℃
Total Power Dissipation4
34.7
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
℃
/W
RθJC
Thermal Resistance Junction-Case1
3.6
℃
/W


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