AP40H10NF datasheet(1/7 Pages) APME

Part #	AP40H10NF

Description	100V NN-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP40H10NF

100V N+N-Channel Enhancement Mode MOSFET

AP40H10NF RVE1.0

永源微電子科技有限公司

Description

The AP40H10NF uses advanced APM-SGT II technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery

protection or in other Switching application.

General Features

VDS = 100V ID =40A

RDS(ON) < 20mΩ @ VGS=10V （Type：14mΩ）

Application

Consumer electronic power supply

Motor control

Synchronous-rectification

Isolated DC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40H10NF

PDFN5*6-8L

AP40H10NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain source voltage

100

V

VGS

Gate source voltage

±20

V

ID

Continuous drain current1), TC=25 ℃

40

A

ID, pulse

Pulsed drain current2), TC=25 ℃

120

A

PD

Power dissipation3), TC=25 ℃

71

W

EAS

Single pulsed avalanche energy5)

57

mJ

Tstg，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

1.76

℃

/W

RθJA

Thermal resistance, junction-ambient4)

25

°C/W

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AP40H10NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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