AP50H06DF2 datasheet(1/7 Pages) APME

Part #	AP50H06DF2

Description	60V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP50H06DF2

60V N-Channel Enhancement Mode MOSFET

AP50H06DF2 REV1.0

永源微電子科技有限公司

Description

The AP50H06DF2 uses advanced APM-SGTⅠⅠtechnology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =50A

RDS(ON) < 18mΩ @ VGS=10V (Type：13mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP50H06DF2

DFN3*3B-8L

AP50H06DF2 XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

65

V

VGS

Gate source voltage

±20

V

ID@TA=25℃

Continuous drain current

50

A

ID@TA=70℃

Continuous drain current

18

A

IDM

Pulsed drain current

150

A

PD@TA=25℃

Power dissipation

25

W

EAS

Single pulsed avalanche energy

24.5

mJ

TSTG

Storage Temperature Range

-55 to 150

℃

Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

5

°C/W

RθJA

Thermal resistance, junction-ambient5)

85

°C/W

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AP50H06DF2 Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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