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AP50H06NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP50H06NF
Description  60V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP50H06NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP50H06NF
60V N+N-Channel Enhancement Mode MOSFET
AP50H06NF RVE1.0
永源微電子科技有限公司
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP50H06NF
PDFN5*6-8L
AP50H06NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V1
50
A
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
25
A
IDM
Pulsed Drain Current2
150
A
EAS
Single Pulse Avalanche Energy3
64
mJ
PD@TA=25℃
Total Power Dissipation4
3.6
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJC
Thermal Resistance Junction-Case1
2.8
℃/W
RθJA
Thermal Resistance Junction-Ambient 1
25
℃
/W
Description
The AP50H06NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection or in
other Switching application.
General Features
VDS = 60V ID =50A
RDS(ON) < 16mΩ @ VGS=10V (Type：11mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply


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